? semiconductor components industries, llc, 2010 march, 2010 ? rev. 4 1 publication order number: mjw3281a/d mjw3281a (npn) mjw1302a (pnp) complementary npn-pnp silicon power bipolar transistors the mjw3281a and mjw1302a are powerbase power transistors for high power audio, disk head positioners and other linear applications. features ? designed for 100 w audio frequency ? gain complementary: gain linearity from 100 ma to 7 a h fe = 45 (min) @ i c = 8 a ? low harmonic distortion ? high safe operation area ? 1 a/100 v @ 1 second ? high f t ? 30 mhz typical ? pb ? free packages are available* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ceo 230 vdc collector ? base voltage v cbo 230 vdc emitter ? base voltage v ebo 5.0 vdc collector ? emitter voltage ? 1.5 v v cex 230 vdc collector current ? continuous collector current ? peak (note 1) i c 15 25 adc base current ? continuous i b 1.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.625 c/w thermal resistance, junction ? to ? ambient r ja 40 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle < 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information mjw3281a to ? 247 to ? 247 case 340l 30 units/rail 2 1 15 amperes complementary silicon power transistors 230 volts 200 watts 3 marking diagram mjwxxxxa aywwg xxxx = 3281 or 1302 a = assembly location y = year ww = work week g = pb ? free package mjw1302a to ? 247 30 units/rail 1 base 2 collector 3 emitter http://onsemi.com mjw1302ag to ? 247 (pb ? free) 30 units/rail MJW3281AG to ? 247 (pb ? free) 30 units/rail
mjw3281a (npn) mjw1302a (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 230 ? ? vdc collector cutoff current (v cb = 230 vdc, i e = 0) i cbo ? ? 50 adc emitter cutoff current (v eb = 5 vdc, i c = 0) i ebo ? ? 5 adc second breakdown second breakdown collector with base forward biased (v ce = 50 vdc, t = 1 s (non ? repetitive) (v ce = 100 vdc, t = 1 s (non ? repetitive) i s/b 4 1 ? ? ? ? adc on characteristics dc current gain (i c = 100 madc, v ce = 5 vdc) (i c = 1 adc, v ce = 5 vdc) (i c = 3 adc, v ce = 5 vdc) (i c = 5 adc, v ce = 5 vdc) (i c = 7 adc, v ce = 5 vdc) (i c = 8 adc, v ce = 5 vdc) (i c = 15 adc, v ce = 5 vdc) h fe 50 50 50 50 50 45 12 125 ? ? ? 115 ? 35 200 200 200 200 200 ? ? ? collector ? emitter saturation voltage (i c = 10 adc, i b = 1 adc) v ce(sat) ? 0.4 2 vdc base ? emitter on voltage (i c = 8 adc, v ce = 5 vdc) v be(on) ? ? 2 vdc dynamic characteristics current ? gain ? bandwidth product (i c = 1 adc, v ce = 5 vdc, f test = 1 mhz) f t ? 30 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? ? 600 pf
mjw3281a (npn) mjw1302a (pnp) http://onsemi.com 3 typical characteristics i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current bandwidth product (mhz) t pnp mjw1302a f, current bandwidth product (mhz) t npn mjw3281a i c , collector current (amps) 0.1 1.0 10 50 40 30 20 10 0 60 40 30 0 10 0.1 1.0 10 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 20 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 50 figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c , collector current (amps) i c , collector current (amps) h fe , dc current gain h fe , dc current gain i c , collector current (amps) i c , collector current (amps) pnp mjw1302a npn mjw3281a h fe , dc current gain pnp mjw1302a npn mjw3281a 1000 100 10 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 100 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5 v
mjw3281a (npn) mjw1302a (pnp) http://onsemi.com 4 typical characteristics v ce , collector-emitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collector-emitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) pnp mjw1302a npn mjw3281a 45 25 20 15 10 5.0 0 5.0 010152025 45 25 20 15 10 0 5.0 0101520 25 5.0 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 30 40 35 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 40 35 30 figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical base ? emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) figure 12. typical base ? emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) pnp mjw1302a npn mjw3281a pnp mjw1302a npn mjw3281a 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0 100 10 1.0 0.1 0.5 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed)
mjw3281a (npn) mjw1302a (pnp) http://onsemi.com 5 figure 13. active region safe operating area v ce , collector emitter (volts) figure 14. active region safe operating area pnp mjw1302a npn mjw3281a 100 1.0 0.1 1000 10 1.0 100 10 i c , collector current (amps) v ce , collector emitter (volts) 100 1.0 0.1 1000 10 1.0 100 10 i c , collector current (amps) 100 msec 10 msec 1 sec 100 msec 10 msec 1 sec there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 13 and 14 is based on t j(pk) = 150 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. figure 15. mjw1302a typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 16. mjw3281a typical capacitance v r , reverse voltage (volts) c, capacitance (pf) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 t j = 25 c f test = 1 mhz c ib c ob t j = 25 c f test = 1 mhz c ib c ob pnp mjw1302a npn mjw3281a typical characteristics
mjw3281a (npn) mjw1302a (pnp) http://onsemi.com 6 package dimensions to ? 247 case 340l ? 02 issue e n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mjw3281a/d powerbase is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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